NTTFS5826NLTAG
Manufacturer:
On Semiconductor
Mfr.Part #:
NTTFS5826NLTAG
Datasheet:
Description:
MOSFETs WDFN-8 SMD/SMT N-Channel number of channels:1 19 W 60 V Continuous Drain Current (ID):20 A 16 nC
| Parameter | Value |
|---|---|
| Length | 3.15 mm |
| Width | 3.15 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 750 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 19 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 850 pF |
| Continuous Drain Current (ID) | 20 A |
| Rds On Max | 24 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 17 ns |
| Element Configuration | Single |
| Gate Charge | 16 nC |
| Drain to Source Resistance | 24 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
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